High-power terahertz device established NTT Innovative devices and OKI|電経新聞

High-power terahertz device established NTT Innovative devices and OKI

NTT Innovative Devices and OKI have jointly used CFB (Crystal Film Bonding) technology to bond InP (indium phosphide) UTC-PD to SiC (silicon carbide), which has excellent heat dissipation properties, improving the bonding yield and establishing mass production technology for high-power terahertz devices.
CFB is OKI’s proprietary technology that peels off a crystal film and bonds it to a substrate or wafer of a different material.
UTC-PD is an element whose unique operating mode makes it possible to generate high-power signals in an ultra-wideband that could not be achieved with conventional semiconductor elements.
Terahertz waves are a region of electromagnetic waves that is between radio waves and visible light, and combine the “transparency” of radio waves with the “straightness” of light. Its development is expected to be useful in non-destructive testing and security applications because it is not invasive to living organisms, which is an issue with X-ray testing technology.
The two companies plan to use the results of their joint project to move toward mass production of terahertz devices in 2026.
They plan to strengthen collaboration with industry and academia, focusing on the commercialization of 6G communications technology and the widespread use of non-destructive sensing technology.
In addition, they will accelerate efforts to realize a next-generation society through the jointly developed technology, and promote the advanced nature of the technology to the world, both in Japan and the global market.

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